Accession Number:

AD0757244

Title:

Methods of Measurement for Semiconductor Materials, Process Control, and Devices.

Descriptive Note:

Quarterly rept. 1 Jul-Sep 72,

Corporate Author:

NATIONAL BUREAU OF STANDARDS GAITHERSBURG MD

Personal Author(s):

Report Date:

1973-03-01

Pagination or Media Count:

57.0

Abstract:

Significant accomplishments during this reporting period include design of a plan to provide standard silicon wafers for four-probe resistivity measurements for the industry, publication of a summary report on the photoconductive decay method for measuring carrier lifetime, publication of a comprehensive review of the field of wire bond fabrication and testing, and successful completion of organizational activity leading to the establishment of a new group on quality and hardness assurance in ASTM Committee F-1 on Electronics. Work is continuing on measurement of resistivity of semiconductor crystals characterization of generation-recombination-trapping centers in silicon study of gold-doped silicon development of the infrared response technique evaluation of wire bonds and die attachment and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes. New efforts were initiated in both the die attachment and wire bond evaluation tasks. A description of breakdown tracks, a primary failure mode of monolithic integrated circuits stressed with voltage pulses, is given in a separate appendix. Author Modfied Abstract

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Test Facilities, Equipment and Methods
  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE