Transport of Electrons and Holes in Semi-conductors.
PENNSYLVANIA STATE UNIV UNIVERSITY PARK DEPT OF PHYSICS
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Work related to the investigation of excess carrier lifetime as a function of hydrostatic pressure in germanium, to the investigation of high-stress piezodrift effects in p-type germanium, and to the investigation of high-stress piezoresistance of p-type germanium has been completed and published. Studies involving transport behavior of charge carriers in silicon and gallium phosphide are being continued. Apparatus has been constructed to perform the required transport measurements down to 4 degrees K under high uniaxial stress. Work directed toward the construction of the phonon spectrum of lead iodide crystals is being continued. Coupling on consultation activities are briefly described. A list of degrees awarded and articles published under the sponsorship of the grant is included. Author Modified Abstract
- Solid State Physics