Accession Number:

AD0756914

Title:

GaAs Junction Field-Effect Transistor Radiation Study.

Descriptive Note:

Final rept. 1 Jun 71-1 Dec 72,

Corporate Author:

MCDONNELL DOUGLAS ASTRONAUTICS CO HUNTINGTON BEACH CALIF

Personal Author(s):

• Zuleeg,Rainer
• Lehovec,Kurt

Report Date:

1972-11-01

Pagination or Media Count:

101.0

Abstract:

The report conducts an experimental investigation of GaAs J-FETs and their electrical parameter degradation in a fast neutron environment, an experimental investigation of GaAs J-FETs and their electrical behavior transient response in gamma radiation environment, and an experimental investigation of GaAs J-FETs in digital logic function circuits with respect to the threshold of changing logic state induced by ionizing gamma radiation.

Descriptors:

• *FIELD EFFECT TRANSISTORS
• *DAMAGE
• *GALLIUM ARSENIDES
• *LOGIC CIRCUITS
• NEUTRON REACTIONS
• DAMAGE
• CHARGE CARRIERS
• TRANSIENTS
• GAMMA RAYS
• DEGRADATION
• ANNEALING
• INTEGRATED CIRCUITS

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE