GaAs Junction Field-Effect Transistor Radiation Study.
Final rept. 1 Jun 71-1 Dec 72,
MCDONNELL DOUGLAS ASTRONAUTICS CO HUNTINGTON BEACH CALIF
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The report conducts an experimental investigation of GaAs J-FETs and their electrical parameter degradation in a fast neutron environment, an experimental investigation of GaAs J-FETs and their electrical behavior transient response in gamma radiation environment, and an experimental investigation of GaAs J-FETs in digital logic function circuits with respect to the threshold of changing logic state induced by ionizing gamma radiation.
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics