Accession Number:

AD0756914

Title:

GaAs Junction Field-Effect Transistor Radiation Study.

Descriptive Note:

Final rept. 1 Jun 71-1 Dec 72,

Corporate Author:

MCDONNELL DOUGLAS ASTRONAUTICS CO HUNTINGTON BEACH CALIF

Personal Author(s):

Report Date:

1972-11-01

Pagination or Media Count:

101.0

Abstract:

The report conducts an experimental investigation of GaAs J-FETs and their electrical parameter degradation in a fast neutron environment, an experimental investigation of GaAs J-FETs and their electrical behavior transient response in gamma radiation environment, and an experimental investigation of GaAs J-FETs in digital logic function circuits with respect to the threshold of changing logic state induced by ionizing gamma radiation.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE