Accession Number:

AD0756907

Title:

Radiation Damage in Semiconductors.

Descriptive Note:

Final rept. 1 Oct 69-31 May 72,

Corporate Author:

STATE UNIV OF NEW YORK ALBANY RESEARCH FOUNDATION

Personal Author(s):

Report Date:

1972-08-31

Pagination or Media Count:

70.0

Abstract:

The work on radiation damage in semiconductors carried out at SUNYAlbany is described. The work is primarily on EPR spectra observed in neutron irradiated silicon. The observation of seven new spectra are discussed including their behavior on annealing with and without a uniaxially stress. The photo response of EPR spectra is considered. The identification of a major center - the P-1 center, is established as the negative charge state of a five-vacancy center. Author

Subject Categories:

  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE