Accession Number:

AD0756646

Title:

An Investigation of Thin Single-Crystal Silicon Films on Insulator/ Polycrystalline-Silicon Substrates

Descriptive Note:

Final technical rept. 1 Apr-31 Dec 1972

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA SEMICONDUCTOR COMPONENTS DIV

Personal Author(s):

Report Date:

1973-02-01

Pagination or Media Count:

145.0

Abstract:

The report summarizes the results of a nine-month, research-and- development study of the material properties of thin, single-crystal silicon films supported by insulatorpolycrystalline-silicon substrates. Considerable effort was devoted to developing reproducible processes for the fabrication of these thin films, and methods were developed to evaluate their quality. After reasonable film quality had been obtained, the properties of the films were investigated in more detail. The majority-carrier mobility and minority-carrier lifetime were studied. Diffusion of dopant impurity atoms into the films and oxidation of the films were considered, and the stress in the thin films was investigated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE