The Effects of Proton Bombardment on PbSnTe.
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
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The effects of 200-250 KeV proton bombardment on both p-type and n-type Pb0.80Sn0.20Te thin films were investigated. Emphasis was placed on p-type samples to determine the feasibility and dosage required to change the carrier type and to determine the stability after bombardment. This method of conversion has promise in the fabrication of photovoltaic diode arrays for infrared applications. The samples were characterized by Hall effect and conductivity measurements from 90K to 300K. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics