New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals
Semi-annual technical rept. 1 Jul-31 Dec 1972
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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The purpose of this program is to develop new and improved methods for the growth and characterization of gallium arsenide GaAs and mixed III-V semiconductor crystals. Ten floating zone passes were completed on 1 cm diameter GaAs using a new liquid encapsulation technique. Optimal conditions for growth of 1 cm diam GaAs were determined by the travelling heater method. GaxIn1-xSb and GaxAl1-xAs were also prepared. Studies were also made on a new Czochralski technique permitting growth of dislocation-free GaAs, on the gradient freeze growth technique, on nucleation of gas bubbles during crystallization, on oxygen measurement and pumping by electrochemical methods, on cathodoluminescence and electrical anisotrophy due to introduction of dislocations, on Si in GaAs, on the influence of light on cathodoluminescence, and on GaAs Schottky barriers.
- Solid State Physics