Accession Number:

AD0756250

Title:

Damage Profiles in Silicon and their Impact on Device Reliability

Descriptive Note:

Technical rept. 6 Jun-30 Dec 1972

Corporate Author:

IBM CORP HOPEWELL JUNCTION NY EAST FISHKILL LABS

Personal Author(s):

• Schwuttke, Guenter H.

Report Date:

1973-01-01

Pagination or Media Count:

32.0

Abstract:

Standard silicon wafers are shown to frequently contain residual mechanical saw damage in the surface. The damage is identified through transmission electron microscopy TEM as microsplits of the silicon lattice. Microsplits are not detectable by standard inspection, screening or etching techniques. Microsplit dimensions range from 0.1 to 10 micrometer. The density of the splits can vary from zero to 10 to the 6th powersq cm or even higher. Microsplits are shown to cause loss of storage time in MOS capacitors.

Descriptors:

• *CAPACITORS
• *SILICON
• DEFECTS(MATERIALS)
• ELECTRICAL PROPERTIES
• ELECTRON MICROSCOPY
• ETCHING
• RELIABILITY(ELECTRONICS)
• SEMICONDUCTOR DEVICES
• THIN FILM STORAGE DEVICES
• TRANSIENTS

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE