Accession Number:
AD0756249
Title:
Device Fabrication and Radiation Effects Studies of Various Semiconductors.
Descriptive Note:
Technical rept.,
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
Personal Author(s):
Report Date:
1972-12-01
Pagination or Media Count:
134.0
Abstract:
Contents A study of electron beam evaporated high-mobility indium antimonide and III-V compound semiconductor thin films Radiation effects on hall and magnetoresistance devices of InSb bulk and thin films Silicon and GaAsP metal-insulator-semiconductor capacitors and Te thin-film transistors.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics