Accession Number:

AD0756249

Title:

Device Fabrication and Radiation Effects Studies of Various Semiconductors.

Descriptive Note:

Technical rept.,

Corporate Author:

NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH

Personal Author(s):

Report Date:

1972-12-01

Pagination or Media Count:

134.0

Abstract:

Contents A study of electron beam evaporated high-mobility indium antimonide and III-V compound semiconductor thin films Radiation effects on hall and magnetoresistance devices of InSb bulk and thin films Silicon and GaAsP metal-insulator-semiconductor capacitors and Te thin-film transistors.

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE