Accession Number:

AD0755690

Title:

Radiation Effects in Semiconductors and in Semiconductor Instruments. Part II.

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Vavilov,V. S.
• Ukhin,N. A.

Report Date:

1973-01-19

Pagination or Media Count:

198.0

Abstract:

The book presents parameter changes caused by experimental irradiation of transistors, a criterion of transistor radiation resistance, and effects on transistors of various types and levels of irradiation. Changes in parameters and characteristics of semiconductor diodes including VA characteristics and conductivity, are examined, as is the effect of pulsed irradiation on semiconductor devices. Author

Descriptors:

• *SEMICONDUCTOR DEVICES
• *DAMAGE
• TRANSISTORS
• SEMICONDUCTOR DIODES
• USSR
• IONIZATION
• RELIABILITY(ELECTRONICS)
• RELIABILITY(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE