Accession Number:

AD0755530

Title:

Development of Multiply Sensitized Ho:YLF as a Laser Material.

Descriptive Note:

Final rept. 1 Sep 71-31 Aug 72,

Corporate Author:

SANDERS ASSOCIATES INC NASHUA N H ELECTRO-OPTICS DIV

Report Date:

1973-01-01

Pagination or Media Count:

107.0

Abstract:

TURE, THERMAL CONDUCTIVITY, DENSITY, HARDNESS, THERMAL EXPANSION, MODULUS OF ELASTICITY, OPTICAL PROPERTIES, DAMAGE, RADIATION EFFECTSLASER MATERIALS, LITHIUM YTTRIUM TETRAFLUORIDE, HOLMIUM IONS, HOLMIUM GLASS LASERS, THULIUM IONS, TOP SEEDED CRYSTAL GROWTH, ERBIUM IONSThe results of a twelve month program to investigate the physical, spectroscopic and laser properties of multiply sensitized HoYLF are presented. High two micron laser operating efficiencies at room temperature are obtained in this material as the result of absorption of pump radiation by the heavily doped sensitizing Er3-Tm3-Yb3 ions with subsequent, rapid transfer to the active Ho3 species. Laser emission in the 2.06 micrometer region occurs via stimulated emission of the 5I7 - 5I8Ho3 transition. A description of the technique for growth of YLF single crystals together with modifications performed during this program is included. The results of mass spectrographic analysis and chemical analysis of selected growth runs are presented. Phenomenological models of the energy transfer process have been constructed from which predictions of transfer efficiency variations with composition can be made.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE