Accession Number:

AD0755529

Title:

Fundamental Studies of Semiconductor Heteroepitaxy

Descriptive Note:

Semiannual rept. no. 5, Jul-Dec 1972

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS

Report Date:

1973-01-01

Pagination or Media Count:

112.0

Abstract:

The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved with emphasis on chemical vapor deposition CVD techniques applied to the SiAl2O3, SiMgAl2O4, and GaAsAl2O3 systems. The accomplishments of the fifth six-month period are described in terms of seven program subtasks.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE