Fundamental Studies of Semiconductor Heteroepitaxy
Semiannual rept. no. 5, Jul-Dec 1972
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
Pagination or Media Count:
The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved with emphasis on chemical vapor deposition CVD techniques applied to the SiAl2O3, SiMgAl2O4, and GaAsAl2O3 systems. The accomplishments of the fifth six-month period are described in terms of seven program subtasks.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics