Reliability Testing of Electron Bombarded Semiconductor Diodes.
Final technical rept.,
WATKINS-JOHNSON CO PALO ALTO CALIF
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Reliability tests of reverse biased semiconductor diodes under CW electron beam bombardment are described. A semiconductor target, with aluminum top metallizat ion was tested at 6 Wsq mm diode dissipation density for 1037 hours and at 10 Wsq mm for an additional 1045 hours. A second device with two diodes operating Class B has been tested for 1016 hours at 1 Wsq mm dissipation density. These latter diodes had platinel-silicide top metallization and integral beam shields. Diode reverse breakdown voltage drops of less than 5 percent, after an initial stabilization, are reported. Author
- Electrical and Electronic Equipment