Accession Number:

AD0755449

Title:

Reliability Testing of Electron Bombarded Semiconductor Diodes.

Descriptive Note:

Final technical rept.,

Corporate Author:

WATKINS-JOHNSON CO PALO ALTO CALIF

Personal Author(s):

Report Date:

1973-01-01

Pagination or Media Count:

39.0

Abstract:

Reliability tests of reverse biased semiconductor diodes under CW electron beam bombardment are described. A semiconductor target, with aluminum top metallizat ion was tested at 6 Wsq mm diode dissipation density for 1037 hours and at 10 Wsq mm for an additional 1045 hours. A second device with two diodes operating Class B has been tested for 1016 hours at 1 Wsq mm dissipation density. These latter diodes had platinel-silicide top metallization and integral beam shields. Diode reverse breakdown voltage drops of less than 5 percent, after an initial stabilization, are reported. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE