Vapor Phase Epitaxy of Gallium Arsenide.
NAVAL RESEARCH LAB WASHINGTON D C
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GaAs epitaxial layers of good semiconductor quality comparable to bulk GaAs have been prepared by the arsine method. The preparative technique and improvements are described. Overall, the arsine system has proved not only reliable but simple as well. The growth rates are reasonably high for practical device fabrication. Author
- Solid State Physics