Accession Number:

AD0755425

Title:

Second Breakdown in Germanium Gold-Bonded Diodes

Descriptive Note:

Corporate Author:

NAVAL ORDNANCE LAB WHITE OAK MD

Personal Author(s):

Report Date:

1972-06-20

Pagination or Media Count:

35.0

Abstract:

Germanium gold-bonded diodes were subjected to high power sub microsecond electrical pulses simulating an Electromagnetic Pulse EMP environment in order to study the induced second breakdown. Terminal characteristics of the damaged units revealed the characteristic increase in leakage current and decrease in breakdown voltage usually associated with second breakdown. Closer investigation revealed, however, that several of the generally accepted ideas pertaining to this phenomenon are not valid for germanium gold- bonded diodes. In particular, the concept of filamentary shorts through the junction is inconsistent with observations. Also, the power required to cause second breakdown in the forward direction is less than that required in the reverse direction. This is shown to be due to the geometry of these devices. Other effects are described, and qualitative and qualitative explanations are offered. Methods of improving burnout resistance are also indicated.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE