Low Temperature Growth of Cubic Gallium Nitride.
NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING
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A system is described which uses the organometallic compound triethygallium monammine GaC2H53.NH3 for the chemical vapor deposition of thin films of gallium nitride. Measurements and studies of the physical characteristics and the electrical properties of films obtained from this process are described. The emphasis of this work is towards achieving low temperature 600C growth of gallium nitride in the cubic crystal structure. Author
- Solid State Physics