Accession Number:

AD0754905

Title:

Investigation of Radiation-Induced Defects in Silicon P-N Junctions.

Descriptive Note:

Final rept. 1 May 71-31 Aug 72,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

• Buehler,Martin G.

Report Date:

1972-09-01

Pagination or Media Count:

64.0

Abstract:

The intent investigation characterizes electron- and neutron-induced defects in silicon pn junctions. Both pn and np junctions were fabricated in various 111 silicon substrates which included homogeneous, SiCl4 epitaxial, and SiH4 epitaxial material. Defects were characterized between liquid nitrogen and room temperatures, using thermally stimulated junction measurements. Author

Descriptors:

• *SEMICONDUCTOR DEVICES
• *DAMAGE
• SILICON
• ELECTRON IRRADIATION
• NEUTRON REACTIONS
• DEFECTS(MATERIALS)
• ELECTRIC CURRENT
• CAPACITANCE
• SUBSTRATES
• CHLORIDES
• CHLORIDES

Subject Categories:

• Radioactivity, Radioactive Wastes and Fission Products
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE