Investigation of Radiation-Induced Defects in Silicon P-N Junctions.
Final rept. 1 May 71-31 Aug 72,
TEXAS INSTRUMENTS INC DALLAS
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The intent investigation characterizes electron- and neutron-induced defects in silicon pn junctions. Both pn and np junctions were fabricated in various 111 silicon substrates which included homogeneous, SiCl4 epitaxial, and SiH4 epitaxial material. Defects were characterized between liquid nitrogen and room temperatures, using thermally stimulated junction measurements. Author
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics