Accession Number:

AD0754879

Title:

Effective-Impurity Model of Optical Absorption Edges,

Descriptive Note:

Corporate Author:

PRINCETON UNIV N J DEPT OF PHYSICS

Personal Author(s):

Report Date:

1972-01-01

Pagination or Media Count:

8.0

Abstract:

A simple model of an amorphous or disordered semiconductor is presented in which the disorder is approximated by a distribution of effective impurities. In this model the disorder potential in a given region of the semiconductor is characterized by an effective charge, and the optical absorption in that region is calculated. The total absorption is then a statistical average over effective charge distributions of the absorption in the presence of a single effective-impurity. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE