Accession Number:

AD0754310

Title:

Switching in Amorphous Selenium,

Descriptive Note:

Corporate Author:

MCGILL UNIV MONTREAL (QUEBEC) DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

• Armitage,D.
• Champness,C. H.

Report Date:

1972-02-12

Pagination or Media Count:

8.0

Abstract:

Threshold and memory switching effects have been observed in bulk samples of amorphous selenium, using platinum electrodes, with inelectrode spacing of 100 micrometers. I-V characteristics are compared with microscopic observations of the interelectrode material. This reveals that the switching process seems to be dominated by a diffusion of Pt from the electrodes into the interelectrode Se. However, there are many similarities between switching in Se and those of the chalcogenide alloys. The effect of current and electric field on crystallization rate was studied, and except for joule heating, appears to be insignificant in the case of Se. Author

Descriptors:

• *SEMICONDUCTORS
• *SELENIUM
• SWITCHING CIRCUITS
• SWITCHING CIRCUITS
• CRYSTALLIZATION
• ELECTRIC CURRENT
• ELECTRIC FIELDS
• HEATING
• CANADA

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE