Investigation of Impurities in Thermally Grown SiO2.
Final rept. 3 Jan 72-3 Jan 73,
BATTELLE COLUMBUS LABS OHIO
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The effects of HCl processing on the quality and electrical stability of thermally grown SiO2 layers on Si were investigated electrically by MOS capacitance measurements and analytically by Secondary-Ion Mass Spectrometry SIMS. The results indicate that the addition of 1 to 10 mole percent of HCl to the oxidizing atmosphere during the thermal oxidation of Si affects both the amount of Na incorporated into the growing oxide and the susceptibility of the oxide to the effects of excess Na introduced during postoxidation processing. The passivation of HCl-processed oxides against positive ion instability appears to occur by two mechanisms. At HClO2 ratios approximately or 5 percent, excess Na is trapped or neutralized by Cl incorporated into the oxide, while at HClO2 ratios of about 10 percent, the penetration of surface Na into the oxide is impeded by the presence of grown-in Cl. Author
- Electrical and Electronic Equipment
- Solid State Physics