Accession Number:

AD0753827

Title:

Thickness Dependence of Hopping Transport in a-Ge Films,

Descriptive Note:

Corporate Author:

CALIFORNIA UNIV RIVERSIDE DEPT OF PHYSICS

Personal Author(s):

• Pollak,M.
• Knotek,M. L.
• Donovan,T. M.
• Kurtzman,H.

Report Date:

1972-11-01

Pagination or Media Count:

11.0

Abstract:

The conductivity of gas free thin films of a-germanium was measured as a function of temperature and of film thickness. Existing theories of hopping conduction have been modified to apply to the very thin films. The results obtained are very consistent with the experimental data, indicating strongly that hopping conduction near the Fermi energy is the conduction mechanism responsible for the conductivity below room temperature. The comparison between the experimental results and the theoretical predictions permits separate evaluation of the radius a of the localized wave functions at the Fermi energy, and the density of states at the Fermi energy. Author

Descriptors:

• (*SEMICONDUCTING FILMS
• ELECTRICAL CONDUCTIVITY)
• (*GERMANIUM
• ELECTRICAL CONDUCTIVITY)
• THICKNESS
• CORRELATION TECHNIQUES
• BAND THEORY OF SOLIDS

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE