Accession Number:

AD0753642

Title:

Methods of Measurement for Semiconductor Materials, Process Control, and Devices.

Descriptive Note:

Quarterly rept. 1 Apr-30 Jun 72,

Corporate Author:

NATIONAL BUREAU OF STANDARDS WASHINGTON DC ELECTRONIC TECHNOLOGY DIV

Personal Author(s):

• Bullis, W. Murray

Report Date:

1972-12-01

Pagination or Media Count:

60.0

Abstract:

The quarterly progress report, sixteenth of a series, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include verification of the applicability of resolution of forces in interpreting pull test measurements on unannealed wire bonds on single-level substrates, completion of the feasibility study of ribbon-wire bonding, and development of test procedures in preparation for studies of high-frequency measurements of transistors on the wafer by means of probes. Work is continuing on measurement of resistivity of semiconductor crystals study of gold-doped silicon development of the infrared response technique evaluation of wire bonds and die attachment and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes. Author

Descriptors:

• *QUALITY CONTROL
• THERMAL PROPERTIES
• TEST METHODS
• CHARGE CARRIERS
• GAMMA COUNTERS
• GERMANIUM
• PHOTOELECTRIC EFFECT
• ELECTRICAL RESISTANCE
• MICROWAVE EQUIPMENT
• SILICON
• BONDED JOINTS

Subject Categories:

• Electrical and Electronic Equipment
• Fabrication Metallurgy
• Test Facilities, Equipment and Methods
• Nuclear Instrumentation
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE