Accession Number:

AD0753053

Title:

Characterization of Conduction Processes in Amorphous Semiconductors

Descriptive Note:

Final technical rept. 1 Jan 1971-31 Aug 1972

Corporate Author:

TEXAS A AND M RESEARCH FOUNDATION COLLEGE STATION

Personal Author(s):

• Stone, J. L.

Report Date:

1972-08-31

Pagination or Media Count:

111.0

Abstract:

Several different samples of 2As2Se3,As2Te3, As2Se3, As2Se3, As2S3 and Si3 Ge4 As38 Te55 were used in photodielectric tests. However, none of the experiments, conducted at room temperature, 77K, or 4.2K, produced any photodielectric effect. Several reasons for the absence of positive results were analyzed, and it was decided that low optical absorption of the material, low mobility of free carriers, and short momentum relaxation time were the reasons which best explained the negative photodielectric tests. The thermally stimulated conductivity experiment provides a convenient way to investigate these hypotheses by investigating the trapping centers existing in the material under study. Samples of amorphous thin film As2Se3 were investigated in this manner.

Descriptors:

• *ARSENIC COMPOUNDS
• *SEMICONDUCTING FILMS
• BAND THEORY OF SOLIDS
• CHARGE CARRIERS
• CRYOGENICS
• DIELECTRIC PROPERTIES
• ELECTRICAL CONDUCTIVITY
• GERMANIUM COMPOUNDS
• MICROWAVE EQUIPMENT
• PHOTOELECTRIC EFFECT
• SELENIDES
• SILICON COMPOUNDS
• SULFIDES
• TELLURIDES

Subject Categories:

• Solid State Physics
• Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE