Investigation of Intrinsic Defects in Zinc Selenide Single Crystals through High-Temperature Equilibrium Conductivity Measurements,
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
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The concentration of intrinsic defects in undoped ZnSe-single crystals were investigated in the temperature range from 750C to 980C in connection with zinc partial pressure, which was varied between 700 Torr and 1 Torr. From the measurements, it followed that at high Zn partial pressure, a simple ionized self-donor, and at low Zn partial pressure a doubly ionized self donor, presumably Zn in interlattice space, is the dominating electrically active intrinsic defect in the high temperature equilibrium. The lattice energy for the simply ionized donor was determined to be approximately equal 1.64 eV.
- Solid State Physics