Accession Number:

AD0753043

Title:

Investigation of Intrinsic Defects in Zinc Selenide Single Crystals through High-Temperature Equilibrium Conductivity Measurements,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

• Jahn,Jost-Ulrich

Report Date:

1972-10-27

Pagination or Media Count:

13.0

Abstract:

The concentration of intrinsic defects in undoped ZnSe-single crystals were investigated in the temperature range from 750C to 980C in connection with zinc partial pressure, which was varied between 700 Torr and 1 Torr. From the measurements, it followed that at high Zn partial pressure, a simple ionized self-donor, and at low Zn partial pressure a doubly ionized self donor, presumably Zn in interlattice space, is the dominating electrically active intrinsic defect in the high temperature equilibrium. The lattice energy for the simply ionized donor was determined to be approximately equal 1.64 eV.

Descriptors:

• (*SEMICONDUCTORS
• DEFECTS(MATERIALS))
• (*ZINC COMPOUNDS
• DEFECTS(MATERIALS))
• SELENIDES
• SINGLE CRYSTALS
• ELECTRICAL PROPERTIES
• HIGH TEMPERATURE
• OPTICAL PROPERTIES
• WEST GERMANY

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE