Characterization of IR Windows.
Final technical rept.,
LITTLE (ARTHUR D) INC CAMBRIDGE MASS
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High resistivity GaAs is a candidate window material for high power CO2 lasers emitting at 10.6 micrometers. The measured absorptions at this wavelength have typically been in the range 0.01 to 0.025cm. Other candidate materials have been prepared with absorptivities as low as 0.0006cm. Consequently, a characterization program was undertaken to determine if the measured absorptivities are intrinsic to GaAs or alternatively are the result of a structural or chemical defect common to all melt grown, high resistivity GaAs. Evaluation samples from boules prepared under a wide range of growth conditions were supplied. Characterization procedures emphasized direct observation of structure, using techniques having successively higher limits of resolution methods included optical and infrared microscopy, X-ray topography and transmission electron microscopy. Author
- Lasers and Masers