Accession Number:
AD0752561
Title:
A Radiation Effects Research Program.
Descriptive Note:
Annual rept. 1 Sep 71-31 Aug 72,
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE BUREAU OF ENGINEERING RESEARCH
Personal Author(s):
Report Date:
1972-09-01
Pagination or Media Count:
144.0
Abstract:
Contents Invariant imbedding applied to the solution of transport problems with internal sources - The ill-behaved reflection function case Energy levels and density of states in three-dimensional crystals Band structure of silicon by the APW method Wave functions in semiconductors Thermal oxidation of gallium arsenide phosphide Radiation effects on GaAsP MIS capacitors Open-tube Zn-diffused GaAs1-xPx light-emitting diodes A study of GaAs12P12 MIS capacitors fabricated by using electron-beam-evaporated aluminum oxide Electron and neutron radiation effects on electron-beam evaporated high-mobility thin films of indium antimonide Fabrication of p-type tellurium thin-film transistors using photoengraving and anodized Al2O3 techniques Pulsed electron beam bombardment of semiconductor materials Metal-insulator-semiconductor structures created by ion implantation Metal-TiO2-silicon structures Hybrid radiation-hardened line-driver amplifier Radiation testing accessories designed for use during electron-beam tree experiments.
Descriptors:
- *SEMICONDUCTORS
- *SEMICONDUCTOR DEVICES
- DAMAGE
- DAMAGE
- BAND THEORY OF SOLIDS
- ATOMIC ENERGY LEVELS
- SILICON
- TRANSPORT PROPERTIES
- PHONONS
- WAVE FUNCTIONS
- TRANSISTORS
- GALLIUM ARSENIDES
- PHOSPHIDES
- DIELECTRICS
- CAPACITORS
- INDIUM ANTIMONIDES
- TELLURIUM
- MANUFACTURING
- ELECTRON IRRADIATION
- ION BOMBARDMENT
- TITANIUM COMPOUNDS
- DIOXIDES
- SEMICONDUCTING FILMS
- COMPUTER PROGRAMS
- COMPUTER PROGRAMS
Subject Categories:
- Electrooptical and Optoelectronic Devices
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics