Accession Number:

AD0752560

Title:

Contacts between Chalcogenide Glasses, Metals and Semiconductors

Descriptive Note:

Semi-Annual technical rept.

Corporate Author:

PENNSYLVANIA STATE UNIV STATE COLLEGE MATERIALS RESEARCH LAB

Personal Author(s):

• Lee, S. H.
• Henisch, H. K.

Report Date:

1972-12-01

Pagination or Media Count:

24.0

Abstract:

The purposes of the research are to elucidate the mechanism of threshold switching, and to explore systems with contact materials which can be electronically altered in situ. With this end in view, the experimental work performed during the last six months has concerned itself with the following problems Calculation of the voltage-current characteristics in the ON-state, based on a free-carrier space charge model Establishment of a criterion for the instability threshold point, based on the equivalence of dielectric relaxation time and carrier lifetime and, Attempts at correlating carrier lifetime with the short-term memory and minimum holding current of threshold switches.

Descriptors:

• *SEMICONDUCTING FILMS
• ARSENIDES
• CHARGE CARRIERS
• ELECTRIC SWITCHES
• ELECTRICAL CONDUCTIVITY
• GERMANIUM COMPOUNDS
• GLASS
• SILICON COMPOUNDS
• TELLURIDES
• TUNNELING(ELECTRONICS)

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE