Accession Number:

AD0752081

Title:

Sputtered Thin Film Research

Descriptive Note:

Semi-annual technical rept. 15 Apr-15 Oct 1972

Corporate Author:

UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT

Personal Author(s):

• Shuskus, Alexander J.
• Quinn, Daniel J.
• Paradis, Edward L.

Report Date:

1972-11-27

Pagination or Media Count:

57.0

Abstract:

The deposition of aluminum nitride was studied by comparing results obtained by reactive rf sputtering in nitrogen and ammonia ambients. Physical and optical properties of the films were measured. Charge storage characteristics of MIS capacitors employing a composite insulator structure of SrTiO3-SiO2 were studied. The strontium titanate was deposited by rf sputtering. Field effect transistors using SrTiO3-SiO2 gate insulation were fabricated and evaluated.

Descriptors:

• *DIELECTRIC FILMS
• *SEMICONDUCTING FILMS
• *SPUTTERING
• ALUMINUM COMPOUNDS
• CAPACITORS
• FIELD EFFECT TRANSISTORS
• NITRIDES
• SEMICONDUCTOR DEVICES
• STRONTIUM COMPOUNDS
• TITANATES

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE