Sputtered Thin Film Research
Semi-annual technical rept. 15 Apr-15 Oct 1972
UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT
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The deposition of aluminum nitride was studied by comparing results obtained by reactive rf sputtering in nitrogen and ammonia ambients. Physical and optical properties of the films were measured. Charge storage characteristics of MIS capacitors employing a composite insulator structure of SrTiO3-SiO2 were studied. The strontium titanate was deposited by rf sputtering. Field effect transistors using SrTiO3-SiO2 gate insulation were fabricated and evaluated.
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