Accession Number:

AD0751852

Title:

Power Transistor Stability and Reliability

Descriptive Note:

Research and development interim technical rept. 1 Jun 1971-31 May 1972

Corporate Author:

MASSACHUSETTS UNIV AMHERST DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1972-09-01

Pagination or Media Count:

113.0

Abstract:

A theoretical model has been developed for the prediction of forward second breakdown due to lateral thermal instability in power transistors operating at low frequency. The method of analysis is to derive the steady-state current density and temperature distribution of a given transistor design under specified operating conditions and then calculate the response of the device to an internally applied temperature impulse. The current flow calculations were carried out using a distributed transistor model and a finite difference approach is used for the time-dependent heat flow problem. The effect of device design parameters such as chip thickness, base width, emitter width, base impurity concentration, etc., on the thermal stability was calculated. Also the effect on transistor stability of the current and voltage operating point, as well as heat sink temperature was analyzed.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE