Studies of Photo-Induced Tunnel Currents in A1-A1203-Au Structures.
Final technical rept. Jul 71-Jun 72,
HEBREW UNIV JERUSALEM (ISRAEL)
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The work describes the study of tunnel-diodes of the metal-insulator-metal structure based on measurements of the photo-induced tunnel current PITC. Effort provided a series of measurements on Al-Al2O3-Au tunnel diodes that included PITC as well as I-V and internal photo-emission measurements. A simplified model is presented from which a theoretical expression for the PITC can be derived. It is shown that the experimental results are in a fairly good agreement with the theory. The potential barriers at the Al-Al2O3 and Au-Al2O3 interfaces were deduced to be 2.0 and 4.35 ev. The cross-section for photo-generation of electrons in the aluminum metal was estimated as 10 to the minus 16th power sq cm. It is also shown that electron reflection at the metal-oxide interfaces andor scattering in the Al2O3 layer are quite important, possibly reducing the current by as much as two orders of magnitude. Author
- Electrical and Electronic Equipment
- Solid State Physics