Accession Number:

AD0751629

Title:

The Trap Structure of Pyrolytic Al2O3 in MOS Capacitors

Descriptive Note:

Technical rept.

Corporate Author:

PRINCETON UNIV NJ SOLID STATE AND MATERIALS LAB

Personal Author(s):

Report Date:

1972-11-15

Pagination or Media Count:

11.0

Abstract:

The trap structure of the pyrolytic Al2O3 layer of MOS capacitors was investigated by a technique in which the capacitor was used as an integral detector of the charge trapped in the oxide. In all the samples studied, five trap levels were found to exist extending from 2.2 eV to 4.5 eV below the oxide conduction band. The spatial distribution of these traps was inferred from complementary photoconductivity measurements. This method is applicable to the study of the effects of radiation damage and ion implantation on the trap structure of this and other thin film insulators.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE