Accession Number:

AD0750977

Title:

Investigating the Possibilities of Increasing the Stability of the Photoelectric Characteristics of Irradiated Silicon n-p Junctions,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1972-08-11

Pagination or Media Count:

15.0

Abstract:

A change in the photoelectric characteristics of n-p junctions caused by hard irradiation is ordinarily undesirable and can be reduced by various methods. This work presents certain results of experiments on annealing irradiated silicon n-p junctions made of p-type material and on the effect of the proton bombardment of n-p junctions based on n-type silicon with a lithium admixture. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE