THM Growth of Materials for Electro-Optic Light Modulators
Final rept. 15 Jul 1971-14 Jul 1972
TYCO LABS INC WALTHAM MA
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The report summarizes the years work in growth of crystals of electrooptic materials from a solvent zone a growth method designated THM. Single crystals of proustite Ag3AsS3 and a crystal of Bi12TiO20 were achieved. Extensive effort on growth of CdSnAs2 from Sn and CdGeAs2 from Pb zones did not yield useful-sized crystals even after significant improvements in the THM arrangement. Investigations of the phase equilibria determined that in each case a phase other than the desired ternary arsenide was on the verge of crystallizing from the solvent zone. Also, it was deduced that constitutional supercooling occurred in the diffusion boundary layer of the THM runs on both systems. The contrasting results on proustite and the II-IV-V2 compounds are attributed to different degrees of supercooling due to differences of molecular association in the liquid phase.