Crystal Growth from the Vapor Phase and Epitaxy: An International Conference Held in Jerusalem, 21-25 May 1972.
OFFICE OF NAVAL RESEARCH LONDON (ENGLAND)
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The main topic of the Conference was the relationship of scientific progress to industrial application in the semiconductor and microelectronics fields. Subjects discussed included material transport, nucleation, and crystal growth, especially in their relation to the production of epitaxial films for use in electronic devices. One of the newer techniques presented was liquid phase epitaxy in which the epitaxial layer is precipitated from a supersaturated or supercooled solution on a crystalline substrate. Properties of various epitaxial films and methods for their evaluation were another subject for discussion. Author