Accession Number:

AD0750611

Title:

Optoelectronic Electron Emitter.

Descriptive Note:

Semiannual rept. 1 Jan-30 Jun 1972

Corporate Author:

RCA LABS PRINCETON NJ

Report Date:

1972-10-01

Pagination or Media Count:

29.0

Abstract:

The electron energy distribution of a semiconductor cold-cathode based on negative electron affinity was measured. The half-width of the energy distribution of electrons, emitted from a GaAs-AlGaAs structure, was found to be 160 meV which is distinctly narrower than that for a conventional thermionic cathode. The measured half-width is in fair agreement with calculations that take into account energy losses suffered by the electrons in the space-charge region below the surface.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE