Accession Number:
AD0750611
Title:
Optoelectronic Electron Emitter.
Descriptive Note:
Semiannual rept. 1 Jan-30 Jun 1972
Corporate Author:
RCA LABS PRINCETON NJ
Personal Author(s):
Report Date:
1972-10-01
Pagination or Media Count:
29.0
Abstract:
The electron energy distribution of a semiconductor cold-cathode based on negative electron affinity was measured. The half-width of the energy distribution of electrons, emitted from a GaAs-AlGaAs structure, was found to be 160 meV which is distinctly narrower than that for a conventional thermionic cathode. The measured half-width is in fair agreement with calculations that take into account energy losses suffered by the electrons in the space-charge region below the surface.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment