Accession Number:

AD0750506

Title:

Study of the Nature of a p-n Heterogeneous Junction in a CdSe Monocrystal Obtained by the Gas Transport Method,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1972-08-02

Pagination or Media Count:

10.0

Abstract:

CdSe is one of the effective materials for the creation of photoelectric converters. The paper is concerned with a study of the nature of the p-n-junction in a CdSe monocrystal. The monocrystals used in this project were grown by the gas transport method. They were black in color, lobe-shaped with an area of 1 to 4 times to the -2 powersq cm and a thickness of 0.01-0.03 cm, possessed electron conductivity, a specific resistance at room temperature of 130-150 ohmscm, an electron concentration of ne about 10 to the 16th power cc, and a mobility of etae about 300 sq cmv-s.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE