Electron Beam Semiconductor Amplifier (L-Band).
Triannual rept. no. 5, 1 Nov 71-29 Feb 72,
WATKINS-JOHNSON CO PALO ALTO CALIF
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The goal of the program is to design, develop, fabricate and test exploratory development models of an L-band, RF pulse amplifier capable of 2 kilowatts peak RF output power at 1300 MHz plus or minus 10, with a 25 dB power gain at 50 efficiency. The principal effort during this reporting period has been concentrated on the fabrication and testing of the first developmental RF amplifier. Tuning tests on this amplier have shown that there is an unexpected loss in the target structure. This results in inefficient operation at frequencies above 100 MHz and has, so far, prevented the achievement of the design level of power output at the specified operating frequency. Author
- Electrical and Electronic Equipment