Trends in Microwave Solid State Power Generation.
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB N Y
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The power-frequency performance of microwave transistors, Gunn-Effect Impact Avalanche Transit Time IMPATT, Trapped Plasma Avalanche Triggered Transit TRAPATT, and Limited Spacecharge Accumulation LSA devices is graphically presented. Based on foreseeable advances in technology, the 1975 expected performance, with a brief discussion of underlying developments as of September 1971, is included. Important aspects of device performance in addition to power are being studied at Cornell University and the University of Michigan under contract with Rome Air Development Center. Two results from these contracts are summarized The Effect of Temperature on the Operation of an IMPATT Diode, and Avalanche Region Width in Various Structures of IMPATT Diodes. Author
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