Interaction Between Amorphous Semiconductor Thin Film and Electron Beam
Semiannual technical rept. no. 1, 7 Feb-6 Aug 1972
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
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The report summarizes present understanding of the interaction between amorphous semiconductor thin films and electron beam and the potential device and system characteristics of an amorphous semiconductor electron beam memory which exploits this interaction. The feasibility of amorphous semiconductor thin films for storing submicron recordings at high writing speed has been demonstrated. Some studies of the trade offs between the electron beam writing characteristics and the target thermal characteristics by computer simulation are described. The memorys speed-density capabilities are constraints by the limited beam current, signal detection limitations and acceptable error rates. The resultant speed-density limitations of this memory imposed by the above fundamental physical constraints are derived. A theory for the memorys modulation efficiency for readout by surface deformation has been derived.
- Computer Hardware
- Solid State Physics