Accession Number:

AD0749282

Title:

Interaction Between Amorphous Semiconductor Thin Film and Electron Beam

Descriptive Note:

Semiannual technical rept. no. 1, 7 Feb-6 Aug 1972

Corporate Author:

GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY

Personal Author(s):

Report Date:

1972-08-30

Pagination or Media Count:

46.0

Abstract:

The report summarizes present understanding of the interaction between amorphous semiconductor thin films and electron beam and the potential device and system characteristics of an amorphous semiconductor electron beam memory which exploits this interaction. The feasibility of amorphous semiconductor thin films for storing submicron recordings at high writing speed has been demonstrated. Some studies of the trade offs between the electron beam writing characteristics and the target thermal characteristics by computer simulation are described. The memorys speed-density capabilities are constraints by the limited beam current, signal detection limitations and acceptable error rates. The resultant speed-density limitations of this memory imposed by the above fundamental physical constraints are derived. A theory for the memorys modulation efficiency for readout by surface deformation has been derived.

Subject Categories:

  • Computer Hardware
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE