Single Crystal Cylindrical Magnetic Domain Materials for Memory Applications
Semiannual technical rept. 1 Oct 1971-30 May 1972
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
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The goal of this program is to demonstrate the feasibility of a buffer memory using the controlled propagation of cylindrical magnetic or bubble domains. The bubble domain material investigation, directed toward preparing single crystal layers which exhibit useful device properties is being pursued with heteroepitaxial films of gallium-substituted yttrium iron garnet or related garnet compositions. The bubble domain device investigation is directed toward developing bubble manipulation techniques suitable for implementing the memory. The body of the report contains sections on material and device work. The material section is chiefly concerned with Czochralski-grown rare earth garnet crystals used as substrates for bubble domain films. This discussion covers observed imperfections in crystals, the effect substrate imperfections have on bubble domain behavior in epitaxial films and crystal growth parameters which influence the formation of these imperfections. The device sections of this report present advances in bubble domain device physics and hardware.
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