Accession Number:

AD0749266

Title:

High Capacitance Thin-Film Structures

Descriptive Note:

Final rept. 15 Apr 1971-14 Apr 1972

Corporate Author:

GTE LABS INC WALTHAM MA

Report Date:

1972-09-01

Pagination or Media Count:

46.0

Abstract:

Silicon integrated square-wave oscillator circuits with an output frequency of 2 to 3.5 kHz were fabricated with thin-film Al-Al2O3-NiO-Al capacitors on their surface as the frequency-determining components. The capacitor values were in the range of 0.4 to 1.8 nF, corresponding to a specific capacitance between 3 and 10 microfaradssq in. Minor modifications of the fabrication process are proposed for improving the uniformity of the capacitance values and maintaining the design goal of 10 microfaradssq in.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE