High Capacitance Thin-Film Structures
Final rept. 15 Apr 1971-14 Apr 1972
GTE LABS INC WALTHAM MA
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Silicon integrated square-wave oscillator circuits with an output frequency of 2 to 3.5 kHz were fabricated with thin-film Al-Al2O3-NiO-Al capacitors on their surface as the frequency-determining components. The capacitor values were in the range of 0.4 to 1.8 nF, corresponding to a specific capacitance between 3 and 10 microfaradssq in. Minor modifications of the fabrication process are proposed for improving the uniformity of the capacitance values and maintaining the design goal of 10 microfaradssq in.
- Electrical and Electronic Equipment