Room Temperature Injection Luminescence in II-VI Semiconductors.
Final rept. 1 Dec 69-30 Nov 71,
BOWMAR CANADA LTD OTTAWA (ONTARIO) OPTOELECTRONICS DIV
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The luminescent properties of ZnSe and ZnS crystals prepared by a number of techniques were investigated and compared with the electroluminescence properties of M-s and M-i-s device structures. Experiments relating to the preparation of heterojunction structures by the application of close-spaced epitaxial techniques to the vapor deposition of ZnSe films on compatible substrates were also conducted and the potential application of III-V - II-VI alloy crystals to this type of device evaluated. A method was developed to prepare heterstructures by solution growth, of GaAs and ZnSe, GaP on ZnS and GaP on ZnSe. Growth of wafers GaInP for application to heterojunction structures was investigated using similar solution growth methods. In the evaluation of the optical properties of heterojunction structures, a high-resolution spectrograph was developed. Author
- Solid State Physics