Characterization of IR Windows
Quarterly technical rept. no. 3
LITTLE (ARTHUR D) INC CAMBRIDGE MA
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The report includes studies on transmission electron microscopy of several of the initially received samples of GaAs crystals as well as back reflection X-ray topography of two additional lots of samples received from Bell Howell. Transmission electron microscopy revealed evidence for the presence of very fine 100A defects having a density of 1 to 5 x 10 to the 17th powercc. Preliminary calculations based on assumed metallic or dielectric properties indicate that the observed optical absorptivities at 10.6 microns could be caused by these defects.
- Lasers and Masers