Accession Number:

AD0748734

Title:

Radiation Defects in Silicon Irradiated by Protons, Deuterons, and Alpha Particles,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Report Date:

1972-06-01

Pagination or Media Count:

12.0

Abstract:

The article considers the spatial distribution of radiation defects in silicon irradiated by protons, deuterons and alpha particles with energies of 6 MeVnucleon. The silicon crystals of n- and p-type had different initial specific resistances. The beam of particles fell along the normal to the edge of the specimen. After irradiation the specific resistance of the specimen was measured along the path of the particles. The measurements were made by the compensation probe method. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE