Accession Number:

AD0748661

Title:

Structural Effects on Electrical Properties in Amorphous Semiconductors

Descriptive Note:

Semiannual technical rept. no. 4, 1 Jan-30 Jun 1972

Corporate Author:

VANDERBILT UNIV NASHVILLE TN SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1972-07-30

Pagination or Media Count:

249.0

Abstract:

Work has continued on a survey of the structure, electrical and magnetic properties of transition metal oxide-phosphate glasses and glasses in the As2Te3-As2Se3 system which possess electrical or magnetic device potential. Results of magnetic and electrical observations in several transition metal- phosphate glasses have revealed a high degree of magnetic and structural order. The pronounced influence of glass-glass phase separation and compositional segregation has also been noted. Examination of a series of FeO-P2O5 glasses has revealed a glass forming range which extends to 80 mole FeO. Low temperature susceptibility and Mossbauer spectroscopy results on these glasses are reported herein. Low temperature susceptibility of the manganese, vanadium and iron glasses indicate that these glasses are all amorphous antiferromagnetic systems with a distinctive downward curvature of the reciprocal susceptibility versus temperature plot. Detailed studies of the As2Te3-As2Se3 system has shown switching behavior which can be controlled with compositional variation. The compositional variation of the microstructure is noted in micrographs included in the report.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE