Accession Number:

AD0748640

Title:

Methods of Measurement for Semiconductor Materials, Process Control, and Devices.

Descriptive Note:

Quarterly rept. 1 Jan-31 Mar 72,

Corporate Author:

NATIONAL BUREAU OF STANDARDS WASHINGTON DC ELECTRONIC TECHNOLOGY DIV

Personal Author(s):

Report Date:

1972-09-01

Pagination or Media Count:

63.0

Abstract:

The report, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments include development of a procedure to correct for the substantial differences of transistor delay time, a device characteristic frequently used as a screen in radiation hardness assurance tests, as measured with different instruments or with the same instrument at different frequencies association of infrared response spectra of poor quality germanium gamma-ray detectors with spectra of detectors fabricated from portions of a good crystal that had been degraded in known ways and confirmation of the excellent quality and cosmetic apperaance of ultrasonic bonds made with aluminum ribbon wire. Work is continuing on measurement of resistivity of semiconductor crystals study of gold-doped silicon development of the infrared response technique evaluation of wire bonds and die attachment and measurement of thermal properties of semiconductor devices, delay time and related carrier transport properties in junction devices, and noise properties of microwave diodes. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Test Facilities, Equipment and Methods
  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE