Accession Number:

AD0748424

Title:

Fundamental Studies of Semiconductor Heteroepitaxy

Descriptive Note:

Semiannual rept. no. 4, Jan-Jun 1972

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS

Report Date:

1972-07-01

Pagination or Media Count:

128.0

Abstract:

The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition CVD techniques applied to the Si-on-Al2O3, Si-on-MgAl2O4, and GaAs-on-Al2O3 systems. The accomplishments of the fourth six-month period are described in terms of seven program subtasks.

Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE