Fundamental Studies of Semiconductor Heteroepitaxy
Semiannual rept. no. 4, Jan-Jun 1972
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
Pagination or Media Count:
The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition CVD techniques applied to the Si-on-Al2O3, Si-on-MgAl2O4, and GaAs-on-Al2O3 systems. The accomplishments of the fourth six-month period are described in terms of seven program subtasks.
- Manufacturing and Industrial Engineering and Control of Production Systems
- Solid State Physics