Accession Number:

AD0748351

Title:

High Temperature Oxidation of Silicon Carbide

Descriptive Note:

Master thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1972-06-01

Pagination or Media Count:

64.0

Abstract:

Thermogravimetric measurements were made for the oxidation of hot pressed silicon carbide at an oxygen pressure of 150 torr and at temperatures from 1300C to 1600C. Oxidized samples were then analyzed using X-ray, metallograph, and electron probe techniques. The oxidation rate was found to increase with temperature. The products of oxidation were a carbon oxide and a protective layer of silica. The silica was primarily amorphous with some tridymite or alpha-cristobalite.

Subject Categories:

  • Inorganic Chemistry
  • Ceramics, Refractories and Glass

Distribution Statement:

APPROVED FOR PUBLIC RELEASE