New Methods for Growth and Characterization of GaAs and Mixed 3-5 Semiconductor Crystals
Final technical rept. 1 Jul 1971-30 Jun 1972
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
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The purpose of the program is to develop new and improved methods for the growth and characterization of gallium arsenide GaAs and mixed III-V semiconductor crystals. A new Czochralski technique was developed which permits fairly routine growth of dislocation-free GaAs crystals. An apparatus for liquid-encapsulated floating-zone melting of III-V crystals was constructed and is gradually being improved. A new method was developed to lower oxygen concentrations during liquid epitaxial growth of GaAs, so as to permit growth at significantly lower temperatures and analysis of the oxygen content of semiconductors. The influence of bending and short term heating on mobility and carrier concentration of GaAs has been studied.
- Solid State Physics