Accession Number:

AD0748329

Title:

On the 'Excess White Noise' in MOS(Metal Oxide Semiconductors) Transistors

Descriptive Note:

Corporate Author:

ILLINOIS UNIV AT URBANA MATERIALS RESEARCH LAB

Personal Author(s):

Report Date:

1970-01-01

Pagination or Media Count:

21.0

Abstract:

Special silicon MOS transistors are fabricated to demonstrate that the proposed excess white noise attributed to the mobility fluctuation does not exist. The previously observed excess noise over the white thermal noise is shown to be caused by the a 1f-type noise component due to noise measurements at insufficiently high frequencies on devices which have very high 1f noise.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE